United Silicon Carbide Inc
United Silicon Carbide Inc Other Arrow
united silicon carbide inc all products Arrow Electronics guides innovation forward for over 180 000 of the world s leading manufacturers of technology used in homes business and daily life A global provider of products services and solutions Arrow aggregates electronic components and enterprise computing solutions for customers and
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United Silicon Carbide Inc UnitedSiC Silicon Carbide Schottky Diodes FETs JFETs UnitedSiC technology and products enable affordable power efficiency in key markets that drives a new and greener economy These include Wind and solar power generation
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SiC Research and Development at United Silicon Carbide Inc Looking Beyond 650 1 200 V Diodes and Transistors Happenings Abstract For over a decade now silicon carbide SiC Schottky diodes have been used in myriad highperformance power conversion applications Currently the largest among these applications is power factor correction
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United Silicon Carbide Inc 7 Deer Park Drive Suite E Monmouth Junction NJ 08852 1 732 https //unitedsic 202095
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United Silicon Carbide Inc is located in Princeton NJ United States and is part of the Scientific Research Development Services Industry United Silicon Carbide Inc has 18 total employees across all of its locations and generates 3 83 million in sales USD Sales figure is modelled
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United Silicon Carbide Inc UnitedSiC based in Monmouth Junction NJ USA is pleased to announce its attendance at the 2017 PCIM Europe Conference in Nuremberg Germany Mar 01 2017 PCIMEurope is a leading show case in Europe for power electronics and its applications in Intelligent Motion Renewable
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Silicon carbide semiconductors are used in electric cars solar power and service power supplies used to store vast amounts of data light emitting diodes and sensor applications These markets at present are combined over 1 billion USD annual revenue and they are growing 40 50 year over year This equipment makes the starting material used
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UnitedSiC develops innovative silicon carbide FET and diode power semiconductors that deliver the industry s best SiC efficiency and performance for electric vehicle EV chargers DC DC converters
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United Silicon Carbide Inc provides record breaking efficiency greater power density and higher reliability they any comparable silicon based device with its discrete power products made from silicon carbide substrates USCi s products enable affordable
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Introducing the industry s first 750V high performance SiC FETs Watch Now ‹ › The evolution of this power supply has created ever greater benefits for our customers particularly with respect to energy savings Efficiency and reliability are paramount for them and this latest design with the support of UnitedSiC products excels
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United Silicon Carbide inc is a semiconductor company specializing in the development of high efficiency Silicon Carbide SiC devices and customized products with process expertise in Schottky Barrier Diodes and SiC switches USCi technology and products enable affordable power efficiency in key markets that will drive the new and greener
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United Silicon Carbide Inc Monmouth Junction NJ US Primary Class 257/263 Other Classes High voltage VJFETs implemented using Silicon Carbide SiC and other wide bandgap materials may replace Silicon MOSFETs superjunction MOSFETs and Silicon IGBTs in high power conversion and motor control applications Wide bandgap semiconductors
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No Unknown UF3SC065007K4S Trans MOSFET P CH SiC 650V 120A 4 Pin 4 Tab TO 247 United Silicon Carbide Inc MOSFETs Power MOSFET SiC
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Penn United Carbide is the premier manufacturer of tungsten carbide and silicon carbide components engineered for today s most rigorous applications These applications range from erosion and corrosion resistance in the Oil Gas industry to high impact strength
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United Silicon Carbide Inc May 2018Present 2 years 1 month Monmouth Junction NJ Director of Quality and Safety Blue Blade Steel Sep 2012Dec 2017 5 years 4 months Kenilworth NJ
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UNITED SILICON CARBIDE INC Overview New Products Samples UnitedSiC are helping to accelerate SiC adoption using their innovative device technology they manufacturer SiC Schottky Diodes SiC JFETs and SiC FETs UnitidSiC SiC FETs incorporate a unique cascode configuration where a high performance SiC fast JFET is co packaged with a cascode
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United Silicon Carbide Inc William Simon January 17 19 2017 2 3 1 2 kV Diode and MOSFET Foundry Qualification of 150mm SiC Line Complete Qualification of JBS 650V and 1200V line with all X FAB processes 40mOhm 1200V MOSFET Qualified on 150mm SiC Foundry Line
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United Silicon Carbide Inc Manufacturer Products include SiC transistors diodes silicon carbide devices UnitedSiC is a semiconductor company specializing in the development of high efficiency silicon carbide SiC devices with process expertise in Schottky barrier diodes JFETs MOSFETs and solid state circuit breakers UnitedSiC
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United Silicon Carbide Inc Technical Contact 7 Deer Park Drive Suite E Dr Anup Bhalla Monmouth Junction NJ 08852 Email Main 732 abhalla unitedsic Phone 408 Sales Contact Christopher Rocneanu Mobile 49 0 cro unitedsic Crocneanu unitedsic Contact Information jhostetler unitedsic
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Firm Information Name UNITED SILICON CARBIDE INC Address 7 Deer Park Drive Suite E City/State/Zip Monmouth Junction New Jersey 8852 Phone
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Headquarters Regions Greater New York Area East Coast Northeastern US Founded Date 1999 Operating Status Active Last Funding Type VentureSeries Unknown Company Type For Profit Contact Email info unitedsic Phone Number 732 USCi technology and products enable affordable power efficiency in key markets that will drive the
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Headquarters Regions Greater New York Area East Coast Northeastern US Founded Date 1999 Operating Status Active Last Funding Type VentureSeries Unknown Company Type For Profit Contact Email info unitedsic Phone Number 732 USCi technology and products enable affordable power efficiency in key markets that will drive the
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Shop all products from United Silicon Carbide Inc Fast free and DDP shipping options available Get free design tools and engineering support
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United Silicon Carbide Inc USCi releases its portfolio of 1200V Silicon Carbide JFET product in die form and TO247 packages The breakthrough United Silicon Carbide xJ series of 1200V JFETs are the industry s lowest R DS on SiC transistor device
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UNITED SILICON CARBIDE INC Case or Package Type TO220 2 Diode Type Schottky SiC Forward Voltage 1 7 V Mounting Type Through Hole Rectified Current 4 A Reverse Leakage Current 25 uA Reverse Recovery Time 0 s Reverse Voltage Max 650 V
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ABSTRACT During this program United Silicon Carbide USCi Inc will develop basic analog and digital integrated circuit blocks capable of operation up to 350 oC based on silicon carbide SiC co
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SiC Research and Development at United Silicon Carbide Inc Looking Beyond 650–1 200 V Diodes and Transistors F or over a decade now silicon carbide SiC Schottky diodes have been used in myriad high performance power conversion applica tions Currently the largest among these applications is power factor cor
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Introducing the industry s first 750V high performance SiC FETs Watch Now ‹ › The evolution of this power supply has created ever greater benefits for our customers particularly with respect to energy savings Efficiency and reliability are paramount for them and this latest design with the support of UnitedSiC products excels
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ABSTRACT During this program United Silicon Carbide USCi Inc will develop basic analog and digital integrated circuit blocks capable of operation up to 350 oC based on silicon carbide SiC co SBIR Phase II 2014 Department of Defense Air Force 1 2
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United Silicon Carbide IncRELL Power UnitedSiC strives to drive the acceleration of SiC adoption using its innovative device technology enabling their customers to deliver industry transforming levels of power efficiency to society s most advanced applications particularly in mobility charging IT infrastructure and renewable energy
Get PriceKeith LauDirector of QualityUnited Silicon Carbide
United Silicon Carbide Inc May 2018Present 2 years 1 month Monmouth Junction NJ Director of Quality and Safety Blue Blade Steel Sep 2012Dec 2017 5 years 4 months Kenilworth NJ
Get PriceCascode switching circuitUnited Silicon Carbide Inc
United Silicon Carbide Inc Monmouth Junction NJ US Primary Class 1/1 International Classes H03K17/56 H03K17/687 View Patent Images Download PDF US Patent References Switch Circuit with a First Transistor Device and a Second Transistor Device Connected in Series Norling et al
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Aparna Kumar Monmouth Junction New Jersey United States Sales Operations Manager at United Silicon Carbide Inc Experienced Sales And Marketing Representative with a demonstrated history
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United Silicon Carbide Inc Monmouth Junction NJ US Primary Class 361/58 Other Classes 361/93 1 361/93 9 With the introduction of wide bandgap semiconductor power devices such as those based on silicon carbide SiC gallium nitride GaN and diamond direct serial connectivity of protection devices in the circuit or system to be
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